Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2016|858|77-80

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 77-80

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Abstract