3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation

E-ISSN： 1662-9752|2016|858|974-977

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 974-977

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 604-607

Trans Tech Publications

Access to resources Recommend Favorite

Low R_ons in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base Region

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 769-772

Trans Tech Publications

Access to resources Recommend Favorite

4.5-kV 20-mΩ.cm² Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 838-841

Trans Tech Publications

Access to resources Recommend Favorite

10+ kV Implantation-Free 4H-SiC PiN Diodes

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 423-426

Trans Tech Publications

Access to resources Recommend Favorite

3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 493-496

Trans Tech Publications

Access to resources Recommend Favorite