High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2016|858|651-654

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 651-654

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Abstract