Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness

E-ISSN： 1662-9752|2016|858|655-658

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 655-658

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