Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2016|858|380-383
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 380-383
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Access to resources
Recommend
Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
LACBED study of extended defects in 4H-SiC
By Texier M. Regula G. Lancin M. Pichaud B.
Philosophical Magazine Letters, Vol. 86, Iss. 9, 2006-09 ,pp. :
4H-SiC Defects Analysis by Micro Raman Spectroscopy
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Three-Dimensional Imaging of Extended Defects in 4H-SiC
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :