Effects of Basal Plane Dislocation Density in 4H-SiC Substrate on Degradation of Body-Diode Forward Voltage

E-ISSN： 1662-9752|2016|858|384-388

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 384-388

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