Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2016|858|23-28
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 23-28
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Gas-source MBE of SiC/Si using monomethylsilane
By Nakazawa H. Suemitsu M. Asami S.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :