Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 61-64

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Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 129-132

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Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 39-42

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The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 229-232

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Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 169-172

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