Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|825-828

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 825-828

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