Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications

E-ISSN： 1662-9752|2016|858|982-985

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 982-985

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 737-740

Trans Tech Publications

Access to resources Recommend Favorite

SiC for Biomedical Applications

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 1010-1014

Trans Tech Publications

Access to resources Recommend Favorite

Characterization of Cat-CVD grown Si-C and Si-C-O dielectric films for ULSI applications

By Takatsuji K. Kawakami M. Makita Y. Murakami K. Nakayama H. Miura Y. Shimoyama N. Machida H.

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 116-119

Elsevier

Access to resources Recommend Favorite

SiC Power Devices in Impedance Source Converters

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 701-704

Trans Tech Publications

Access to resources Recommend Favorite

Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 978-981

Trans Tech Publications

Access to resources Recommend Favorite