Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2016|858|93-96

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 93-96

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Abstract