The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method

E-ISSN： 1662-9752|2016|858|113-116

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 113-116

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of Porous Graphite for High Quality SiC Crystal Growth by PVT Method

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 43-46

Trans Tech Publications

Access to resources Recommend Favorite

Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 1007-1010

Trans Tech Publications

Access to resources Recommend Favorite

Influence of Impurities in SiC Powder on High Quality SiC Crystal Growth

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 85-88

Trans Tech Publications

Access to resources Recommend Favorite

Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 93-96

Trans Tech Publications

Access to resources Recommend Favorite

Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 96-99

Trans Tech Publications

Access to resources Recommend Favorite