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Trapping States in SiO₂/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 1178-1181

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Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at Al_xGa_1-xN/4H-SiC Interface

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Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al₂O₃ Gate Dielectric Fabricated on SiC Substrates

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Reliable 4H-SiC MOSFET with High Threshold Voltage by Al₂O₃-Inserted Gate Insulator

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