Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|397-400

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 397-400

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 303-306

Trans Tech Publications

Access to resources Recommend Favorite

Effects of Basal Plane Dislocation Density in 4H-SiC Substrate on Degradation of Body-Diode Forward Voltage

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 384-388

Trans Tech Publications

Access to resources Recommend Favorite

Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEM

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 197-200

Trans Tech Publications

Access to resources Recommend Favorite

Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

By Matsuhata Hirofumi  

Philosophical Magazine, Vol. 92, Iss. 36, 2012-12 ,pp. : 4599-4617

Taylor & Francis Ltd

Access to resources Recommend Favorite

Observation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron Microscopy

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 371-375

Trans Tech Publications

Access to resources Recommend Favorite