Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEM

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 197-200

Trans Tech Publications

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Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 307-310

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Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 285-288

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Transmission electron microscope study of a threading dislocation with b = [0001] + <11̅00> and its effect on leakage in a 4H–SiC MOSFET

By Onda Shoichi   Watanabe Hiroki   Kito Yasuo   Kondo Hiroyuki   Uehigashi Hideyuki   Hosokawa Norikazu   Hisada Yoshiyuki   Shiraishi Kenji   Saka Hiroyasu  

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Taylor & Francis Ltd

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Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC

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