![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2016|858|913-916
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 913-916
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
4H-SiC VJFETs with Self-Aligned Contacts
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Capacitances in 4H-SiC TSI-VJFETs
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :