Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2017|897|407-410

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 407-410

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract