Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2016|858|209-212
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 209-212
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Improvement of 4H-SiC Epitaxial Layers Grown on 2o Offcut Si-Face Substrates
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates
Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. :
Low Pressure Homoepitaxial Growth of 4H-SiC on 4°off-Axis Substrates
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :