Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs

Publisher: Edp Sciences

E-ISSN: 1286-4897|3|6|1189-1199

ISSN: 1155-4320

Source: Journal de Physique III, Vol.3, Iss.6, 1993-06, pp. : 1189-1199

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