Trap and Dislocation Electrical Activity in a Reversely Biased P-N Junction in Silicon

Publisher： Edp Sciences

E-ISSN： 1286-4897|5|9|1307-1326

ISSN： 1155-4320

Source： Journal de Physique III, Vol.5, Iss.9, 1995-09, pp. : 1307-1326

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