Setup parameters controlling the growth rate of silicon carbide epitaxial layers in a vacuum

Author: Davydov S.   Lebedev A.   Savkina N.   Volkova A.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7842

Source: Technical Physics, Vol.50, Iss.4, 2005-04, pp. : 503-507

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