The stability of tin silicon oxide thin-film transistors with different annealing temperatures

Author: Yang Jianwen   Fu Ruofan   Han Yanbing   Meng Ting   Zhang Qun  

Publisher: Edp Sciences

E-ISSN: 1286-4854|115|2|28006-28006

ISSN: 0295-5075

Source: EPL (EUROPHYSICS LETTERS), Vol.115, Iss.2, 2016-08, pp. : 28006-28006

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