Functionality of thermally hydrogen-passivated interfaces of oxidized crystalline arrays of Si nanowires on (100)Si

Author： Jivanescu M. Stesmans A. Kurstjens R.

E-ISSN： 1286-4854|106|6|66003-66003

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.106, Iss.6, 2014-06, pp. : 66003-66003

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electron transport through dangling-bond silicon wires on H-passivated Si(100)

By Kepenekian Mikaël Novaes Frederico D Robles Roberto Monturet Serge Kawai Hiroyo Joachim Christian Lorente Nicolás

Journal of Physics: Condensed Matter, Vol. 25, Iss. 2, 2013-01 ,pp. : 25503-25513

IOP Publishing

Access to resources Recommend Favorite

Thermal Conductivity Measurement of Thermally-Oxidized SiO₂ Films on a Silicon Wafer Using a Thermo-Reflectance Technique

By Kato R. Hatta I.

International Journal of Thermophysics, Vol. 26, Iss. 1, 2005-01 ,pp. : 179-190

Springer Publishing Company

Access to resources Recommend Favorite

Fabricating arrays of Si(110)/Si(100) microstructures by atom lithography using organosilane self-assembled monolayers

Journal of Physics: Conference Series , Vol. 188, Iss. 1, 2009-09 ,pp. : 39-47

IOP Publishing

Access to resources Recommend Favorite

Combined AFM and laser lithography on hydrogen-passivated amorphous silicon

By Birkelund K. Mullenborn M. Grey F. Jensen F. Madsen S.

Superlattices and Microstructures, Vol. 20, Iss. 4, 1996-12 ,pp. : 555-560

Academic Press

Access to resources Recommend Favorite

Surface morphology of RF plasma immersion H+ ion implanted and oxidized Si(100) surface

Journal of Physics: Conference Series , Vol. 514, Iss. 1, 2014-05 ,pp. : 184-189

IOP Publishing

Access to resources Recommend Favorite