Author： Gao K. H. Wang Q. W. Lin T. Li Z. Q. Zhang X. H. Xu J. Deng H. Y. Chu J. H.
Publisher： Edp Sciences
E-ISSN： 1286-4854|102|3|37009-37009
ISSN： 0295-5075
Source： EPL (EUROPHYSICS LETTERS), Vol.102, Iss.3, 2013-05, pp. : 37009-37009
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
Changes in screen-printed ZnO/CuInSe2 p-n junction before and after laser ablation
Journal of Physics: Conference Series , Vol. 619, Iss. 1, 2015-06 ,pp. :
Access to resources
Analysis of a Graphane p—n Junction Using the Green Function Method
By Horri Ashkan
Chinese Physics Letters, Vol. 31, Iss. 8, 2014-08 ,pp. :
Trap and Dislocation Electrical Activity in a Reversely Biased P-N Junction in Silicon
Journal de Physique III, Vol. 5, Iss. 9, 1995-09 ,pp. :
Low-voltage control of ferromagnetism in a semiconductor p–n junction
New Journal of Physics, Vol. 11, Iss. 2, 2009-02 ,pp. :