Polar ZnO thin-film nonvolatile transistors with (Bi, Nd)4Ti3O12 gate insulators

Author： Tan Q. H.   Wang J. B.   Zhong X. L.   Wang Q. J.   Zhang Y.   Zhou Y. C.  

Publisher： Edp Sciences

E-ISSN： 1286-4854|97|5|57012-57012

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.97, Iss.5, 2012-03, pp. : 57012-57012

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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