Band alignment determination of ZnO/PbSe heterostructure interfaces by synchrotron radiation photoelectron spectroscopy

Author: Cai C. F.   Zhang B. P.   Li R. F.   Wu H. Z.   Xu T. N.   Zhang W. H.   Zhu J. F.  

Publisher: Edp Sciences

E-ISSN: 1286-4854|99|3|37010-37010

ISSN: 0295-5075

Source: EPL (EUROPHYSICS LETTERS), Vol.99, Iss.3, 2012-08, pp. : 37010-37010

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Abstract

Band offsets at ZnO/PbSe heterostructure interfaces are determined by synchrotron radiation photoelectron spectroscopy. A type-I band alignment with the valence band offset (VBO) ΔEV = 0.73 eV and conduction band offset (CBO) ΔEC = 2.36 eV is concluded for ZnO/PbSe film heterojunctions. The approach is extended to ZnO/PbSe nanocrystal (NC) heterojunctions, which reveals that band alignment can be adjusted via varying the dot size and a type-II alignment is formed when the dot size is ⩽5 nm. The small conduction band offset of the ZnO/PbSe film heterojunction and the tunable band alignment of the ZnO/PbSe NCs heterojunction with different crystal sizes shall benefit the design and fabrication of improved optoelectronic devices.

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