A simple approach to form $\chem{Ge}$ nanocrystals embedded in amorphous $\chem{Lu_{2}{O}_{3}}$ high-$k$ gate dielectric by pulsed laser ablation

Publisher： Edp Sciences

E-ISSN： 1286-4854|74|1|177-180

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.74, Iss.1, 2006-04, pp. : 177-180

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