Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics

Publisher： Cambridge University Press

E-ISSN： 2044-5326|32|18|3458-3468

ISSN： 0884-2914

Source： Journal of Materials Research, Vol.32, Iss.18, 2017-09, pp. : 3458-3468

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