Influence of Ammonia Flow on Microstructural Properties of Polar GaN Layers Grown by HTVPE on Sapphire Substrates

E-ISSN： 1521-4079|53|1|crat.201700113-crat.201700113

ISSN： 0232-1300

Source： CRYSTAL RESEARCH AND TECHNOLOGY (ELECTRONIC), Vol.53, Iss.1, 2018-01, pp. : n/a-n/a

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