Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties

Author： Kim H.J. Kwon S.-Y. Yim S. Na H. Kee B. Yoon E. Kim J. Park S.-H. Jeon H. Kim S. Seo J.H. Park K. Seon M.S. Sone C. Nam O.H. Park Y.

Publisher： Elsevier

ISSN： 1567-1739

Source： Current Applied Physics, Vol.3, Iss.4, 2003-06, pp. : 351-354

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