Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties

Author: Kim H.J.   Kwon S.-Y.   Yim S.   Na H.   Kee B.   Yoon E.   Kim J.   Park S.-H.   Jeon H.   Kim S.   Seo J.H.   Park K.   Seon M.S.   Sone C.   Nam O.H.   Park Y.  

Publisher: Elsevier

ISSN: 1567-1739

Source: Current Applied Physics, Vol.3, Iss.4, 2003-06, pp. : 351-354

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