Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaOx‐Based Memory Platform

Publisher： John Wiley & Sons Inc

E-ISSN： 2196-7350|4|24|admi.201700959-admi.201700959

ISSN： 2196-7350

Source： ADVANCED MATERIALS INTERFACES (ELECTRONIC), Vol.4, Iss.24, 2017-12, pp. : n/a-n/a

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