A pertinent approximation of the electrostatic potential in a quantized electron accumulation layer induced at a nonideal surface of a narrow‐gap semiconductor

Publisher： John Wiley & Sons Inc

E-ISSN： 1099-1204|31|1|jnm.2260-jnm.2260

ISSN： 0894-3370

Source： INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Vol.31, Iss.1, 2018-01, pp. : n/a-n/a

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