Evidence for Itinerant Carriers in an Anisotropic Narrow‐Gap Semiconductor by Angle‐Resolved Photoemission Spectroscopy

E-ISSN： 1521-4095|30|2|adma.201704733-adma.201704733

ISSN： 0935-9648

Source： ADVANCED MATERIALS, Vol.30, Iss.2, 2018-01, pp. : n/a-n/a

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Real-space angle-resolved photoemission

By Ernst A. Temmerman W. M. Szotek Z. Woods M. Durham P. J.

Philosophical Magazine B, Vol. 78, Iss. 5-6, 1998-11 ,pp. : 503-511

Taylor & Francis Ltd

Access to resources Recommend Favorite

Angle-resolved measurements of the photoemission of electrons in the study of solids

By Himpsel F.J.

Advances In Physics, Vol. 32, Iss. 1, 1983-01 ,pp. : 1-51

Taylor & Francis Ltd

Access to resources Recommend Favorite

Quantum transport in narrow‐gap semiconductor nanocolumns

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 7, Iss. 2, 2010-02 ,pp. : 386-389

John Wiley & Sons Inc

Access to resources Recommend Favorite

Time-resolved two-photon photoemission spectroscopy of semiconductor bulk states

By Ramakrishna S.

Applied Physics A, Vol. 78, Iss. 2, 2004-01 ,pp. : 247-252

Springer Publishing Company

Access to resources Recommend Favorite

A pertinent approximation of the electrostatic potential in a quantized electron accumulation layer induced at a nonideal surface of a narrow‐gap semiconductor

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Vol. 31, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite