Transistors: Large‐Area Schottky Barrier Transistors Based on Vertically Stacked Graphene–Metal Oxide Heterostructures (Adv. Funct. Mater. 30/2017)

Publisher： John Wiley & Sons Inc

E-ISSN： 1616-3028|27|30|adfm.201770174-adfm.201770174

ISSN： 1616-301x

Source： ADVANCED FUNCTIONAL MATERIALS, Vol.27, Iss.30, 2017-08, pp. : n/a-n/a

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