Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

Publisher: John Wiley & Sons Inc

E-ISSN: 1616-3028|26|34|6320-6320

ISSN: 1616-301x

Source: ADVANCED FUNCTIONAL MATERIALS, Vol.26, Iss.34, 2016-09, pp. : 6320-6320

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Abstract

Enhanced metal oxide (In2O3, IZO, IGZO) transistor performance via polyethylenimine (PEI) doping is demonstrated by J. Yu, M. J. Bedzyk, T. J. Marks, A. Fachetti, and co‐workers on page 6179. PEI electron donating capacity combined with charge trapping and variation in the matrix film microstructure contribute, for proper PEI doping levels, to high electron mobility, optimal TFT off‐currents, and optimal threshold voltages. This concept is promising for opto‐electronic devices based on metal oxide films.