Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

Publisher： John Wiley & Sons Inc

E-ISSN： 1616-3028|26|34|6320-6320

ISSN： 1616-301x

Source： ADVANCED FUNCTIONAL MATERIALS, Vol.26, Iss.34, 2016-09, pp. : 6320-6320

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