Publisher: John Wiley & Sons Inc
E-ISSN: 1616-3028|26|34|6320-6320
ISSN: 1616-301x
Source: ADVANCED FUNCTIONAL MATERIALS, Vol.26, Iss.34, 2016-09, pp. : 6320-6320
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Abstract
Enhanced metal oxide (In2O3, IZO, IGZO) transistor performance via polyethylenimine (PEI) doping is demonstrated by J. Yu, M. J. Bedzyk, T. J. Marks, A. Fachetti, and co‐workers on page 6179. PEI electron donating capacity combined with charge trapping and variation in the matrix film microstructure contribute, for proper PEI doping levels, to high electron mobility, optimal TFT off‐currents, and optimal threshold voltages. This concept is promising for opto‐electronic devices based on metal oxide films.