Bipolar Resistive Switching Properties of Hf0.5Zr0.5O2 Thin Film for Flexible Memory Applications

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|215|1|pssa.201700396-pssa.201700396

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.215, Iss.1, 2018-01, pp. : n/a-n/a

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films

By  

ADVANCED MATERIALS, Vol. 28, Iss. 36, 2016-09 ,pp. : 7956-7961

John Wiley & Sons Inc

Access to resources Recommend Favorite

Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2 thin films

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 4, 2015-04 ,pp. : 751-766

John Wiley & Sons Inc

Access to resources Recommend Favorite

The sensing properties of heterojunction SnO 2 /La 0.8 Sr 0.2 Co 0.5 Ni 0.5 O 3 thin-film CO sensor

By Chen Y.C.   Chang Y.H.   Chen G.J.   Chai Y.L.   Ray D.T.  

Sensors and Actuators B: Chemical, Vol. 96, Iss. 1, 2003-11 ,pp. : 82-87

Elsevier

Access to resources Recommend Favorite

Complementary and bipolar regimes of resistive switching in TiN/HfO2/TiN stacks grown by atomic‐layer deposition

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 4, 2015-04 ,pp. : 809-816

John Wiley & Sons Inc

Access to resources Recommend Favorite

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

By  

ADVANCED MATERIALS, Vol. 27, Iss. 25, 2015-07 ,pp. : 3811-3816

John Wiley & Sons Inc

Access to resources Recommend Favorite