Complementary and bipolar regimes of resistive switching in TiN/HfO2/TiN stacks grown by atomic‐layer deposition

E-ISSN： 1862-6319|212|4|809-816

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.4, 2015-04, pp. : 809-816

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