Investigations on AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes With Si‐Doped Quantum Barriers of Different Doping Concentrations

Publisher: John Wiley & Sons Inc

E-ISSN: 1862-6270|12|1|pssr.201700346-pssr.201700346

ISSN: 1862-6254

Source: PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol.12, Iss.1, 2018-01, pp. : n/a-n/a

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