Magnetic‐Induced‐Piezopotential Gated MoS₂ Field‐Effect Transistor at Room Temperature

E-ISSN： 1521-4095|30|8|adma.201704524-adma.201704524

ISSN： 0935-9648

Source： ADVANCED MATERIALS, Vol.30, Iss.8, 2018-02, pp. : n/a-n/a

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