Enhanced Stability of Black Phosphorus Field‐Effect Transistors via Hydrogen Treatment

E-ISSN： 2199-160x|4|2|aelm.201700455-aelm.201700455

ISSN： 2199-160X

Source： ADVANCED ELECTRONIC MATERIALS, Vol.4, Iss.2, 2018-02, pp. : n/a-n/a

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