Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM

Publisher： John Wiley & Sons Inc

E-ISSN： 2199-160x|4|2|aelm.201700561-aelm.201700561

ISSN： 2199-160X

Source： ADVANCED ELECTRONIC MATERIALS, Vol.4, Iss.2, 2018-02, pp. : n/a-n/a

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