Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization (Phys. Status Solidi RRL 2/2018)

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 12, Iss. 2, 2018-02 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Near-infrared metal-semiconductor-metal photodetector integrated on silicon

By Calarco R.   Fiordelisi M.   Lagomarsino S.   Scarinci F.  

Thin Solid Films, Vol. 391, Iss. 1, 2001-07 ,pp. : 138-142

Elsevier

Access to resources Recommend Favorite

Effect of the buffer layer on the metal–semiconductor–metal UV photodetector based on Al‐doped and undoped ZnO thin films with different device structures

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 8, 2015-08 ,pp. : 1704-1712

John Wiley & Sons Inc

Access to resources Recommend Favorite

Polarization-Insensitive Metal-Semiconductor-Metal Nanoplasmonic Structures for Ultrafast Ultraviolet Detectors

By Hu Haifeng  

Plasmonics, Vol. 8, Iss. 2, 2013-06 ,pp. : 239-247

Springer Publishing Company

Access to resources Recommend Favorite

A Plasmonic Platform with Disordered Array of Metal Nanoparticles for Three‐Order Enhanced Upconversion Luminescence and Highly Sensitive Near‐Infrared Photodetector

By  

ADVANCED MATERIALS, Vol. 28, Iss. 36, 2016-09 ,pp. : 7899-7909

John Wiley & Sons Inc

Access to resources Recommend Favorite