Epitaxial Single‐Layer MoS₂ on GaN with Enhanced Valley Helicity

E-ISSN： 1521-4095|30|5|adma.201703888-adma.201703888

ISSN： 0935-9648

Source： ADVANCED MATERIALS, Vol.30, Iss.5, 2018-02, pp. : n/a-n/a

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