X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate

By Qu B.   Zheng X.H.   Wang Y.T.   Feng Z.H.   Liu S.A.   Lin S.M.   Yang H.   Liang J.W.  

Thin Solid Films, Vol. 392, Iss. 1, 2001-07 ,pp. : 29-33

Elsevier

Access to resources Recommend Favorite

Second harmonic generation in AlGaN, GaN and Al_xGa_1–xN/GaN multiple quantum well structures

By Passeri D.   Larciprete M.C.   Belardini A.   Paoloni S.   Passaseo A.   Sibilia C.   Michelotti F.  

Applied Physics B, Vol. 79, Iss. 5, 2004-09 ,pp. : 611-615

Springer Publishing Company

Access to resources Recommend Favorite

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

By Metzger T.   Hopler R.   Born E.   Ambacher O.   Stutzmann M.   Stommer R.   Schuster M.   Gobel H.   Christiansen S.   Albrecht M.   Strunk H. P.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 77, Iss. 4, 1998-04 ,pp. : 1013-1025

Taylor & Francis Ltd

Access to resources Recommend Favorite

Surface and interface electronic properties of AlGaN(0001) epitaxial layers

By Rizzi A.   Kocan M.   Malindretos J.   Schildknecht A.   Teofilov N.   Thonke K.   Sauer R.  

Applied Physics A, Vol. 87, Iss. 3, 2007-06 ,pp. : 505-509

Springer Publishing Company

Access to resources Recommend Favorite

Behaviors of Al x Ga 1-x N (0.5=

By Gong J.R.   Huang C.W.   Tseng S.F.   Lin T.Y.   Lin K.M.   Liao W.T.   Tsai Y.L.   Shi B.H.   Wang C.L.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 73-78

Elsevier

Access to resources Recommend Favorite