Author: Chen Xinchun Kato Takahisa Kawaguchi Masahiro Nosaka Masataka Choi Junho
Publisher: IOP Publishing
ISSN: 0022-3727
Source: Journal of Physics D: Applied Physics, Vol.46, Iss.25, 2013-06, pp. : 255304-255314
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Thickness dependence of hydrogen in a-Si : H films deposited on c-Si
Journal de Physique Lettres, Vol. 42, Iss. 15, 1981-08 ,pp. :
AC FIELD AND FREQUENCY DEPENDENCE OF a-Si:H CONDUCTIVITY AT 4,2 K
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :