![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Cindro V. Mandic I. Kramberger G. Mikuz M. Zavrtanik M.
Publisher: Elsevier
ISSN: 0168-9002
Source: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol.518, Iss.1, 2004-02, pp. : 343-345
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Device simulation of irradiated silicon detectors at cryogenic temperatures
By Santocchia A. MacEvoy B. Hall G. Moscatelli F. Passeri D. Pignatel G.U.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 518, Iss. 1, 2004-02 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Radiation annealing of Silicon Carbide irradiated in a BOR-60 reactor
Atomic Energy, Vol. 97, Iss. 4, 2004-10 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Measurement of trapping time constants in irradiated DOFZ silicon with test beam data
By Lari T. On behalf of the ATLAS Pixel Collaboration
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 518, Iss. 1, 2004-02 ,pp. :