Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources

Author： Begotti M. Longo M. Magnanini R. Parisini A. Tarricone L. Bocchi C. Germini F. Lazzarini L. Nasi L. Geddo M.

Publisher： Elsevier

ISSN： 0169-4332

Source： Applied Surface Science, Vol.222, Iss.1, 2004-01, pp. : 423-431

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