The Valence Band Offset of an Al 0.17 Ga 0.83 N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Author： Xiao-Jia Wan Xiao-Liang Wang Hong-Ling Xiao Cui-Mei Wang Chun Feng Qing-Wen Deng Shen-Qi Qu Jing-Wen Zhang Xun Hou Shu-Jun Cai Zhi-Hong Feng

Publisher： IOP Publishing

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.30, Iss.5, 2013-05, pp. : 57101-57103

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Band alignment of n-SnO₂/p-GaN hetero-junction studied by x-ray photoelectron spectroscopy

By Su S C Zhang H Y Zhao L Z He M Ling C C

Journal of Physics D: Applied Physics, Vol. 47, Iss. 21, 2014-05 ,pp. : 215102-215105

IOP Publishing

Access to resources Recommend Favorite

Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGaδ-doping (AlN)5/(GaN)1: the strain effect

Journal of Physics D: Applied Physics, Vol. 48, Iss. 47, 2015-12 ,pp. : 475104-475117

IOP Publishing

Access to resources Recommend Favorite

Band alignment at the interface of PbTe/SnTe heterojunction determined by X-ray photoelectron spectroscopy

By Shu Tianyu Ye Zhenyu Lu Pengqi Chen Lu Xu Gangyi Zhou Jie Wu Huizhen

EPL (EUROPHYSICS LETTERS), Vol. 116, Iss. 3, 2016-12 ,pp. : 37006-37006

Edp Sciences

Access to resources Recommend Favorite

Evaluation of the band alignment and valence plasmonic features of a DIBS grown Ga-doped Mg0.05Zn0.95O/CIGSe heterojunction by photoelectron spectroscopy

Journal of Physics D: Applied Physics, Vol. 48, Iss. 48, 2015-12 ,pp. : 485305-485316

IOP Publishing

Access to resources Recommend Favorite

X-ray spectra and electronic band structure of nitrogen in Al_xGa_1−xN solid solid solutions

By Ilyasov V. Zhdanova T. Nikiforov I.

Physics of the Solid State, Vol. 49, Iss. 8, 2007-08 ,pp. : 1435-1439

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite