Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGaδ-doping (AlN)5/(GaN)1: the strain effect

Publisher： IOP Publishing

E-ISSN： 1361-6463|48|47|475104-475117

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.47, 2015-12, pp. : 475104-475117

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of pressure and mechanical stress on the electronic properties of AlN and GaN

By Brudnyi V.   Kosobutsky A.   Kolin N.  

Physics of the Solid State, Vol. 53, Iss. 4, 2011-04 ,pp. : 679-688

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Electronic properties of intrinsic and heavily doped AlN and GaN

By  

Le Journal de Physique IV, Vol. 132, Iss. issue, 2006-03 ,pp. : 105-110

Edp Sciences

Access to resources Recommend Favorite

Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers

By Drozdov Yu.   Drozdov M.   Khrykin O.   Shashkin V.  

Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, Vol. 4, Iss. 6, 2010-11 ,pp. : 998-1001

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Measuring two dimensional strain state of AlN quantum dots in GaN nanowires by nanobeam electron diffraction

By  

Journal of Physics: Conference Series , Vol. 326, Iss. 1, 2011-11 ,pp. : 263-266

IOP Publishing

Access to resources Recommend Favorite

The Valence Band Offset of an Al 0.17 Ga 0.83 N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy

By Xiao-Jia Wan   Xiao-Liang Wang   Hong-Ling Xiao   Cui-Mei Wang   Chun Feng   Qing-Wen Deng   Shen-Qi Qu   Jing-Wen Zhang   Xun Hou   Shu-Jun Cai   Zhi-Hong Feng  

Chinese Physics Letters, Vol. 30, Iss. 5, 2013-05 ,pp. : 57101-57103

IOP Publishing

Access to resources Recommend Favorite