Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure

Author: Thanh Pham Van  

Publisher: Taylor & Francis Ltd

ISSN: 0731-5171

Source: Ferroelectrics Letters Section, Vol.40, Iss.1-3, 2013-01, pp. : 17-29

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract